CXMT Says Its 11.95nm Fifth-Generation DRAM Enters Mass Production, Matching Samsung and Micron Nodes
Summary
ChangXin Memory Technologies says its 11.95nm fifth-generation DRAM has entered mass production, claiming parity with Samsung and Micron’s leading nodes while using four-exposure patterning under U.S. export controls.
Key Points
- ChangXin Memory Technologies says its fifth-generation DRAM platform enters mass production and matches Samsung and Micron’s most advanced production nodes.
- The 11.95nm half-pitch platform produces at least 50% more gross dies per wafer than CXMT’s fourth generation and powers two 24Gb LPDDR5X chips for mid-range and high-end phones.
- CXMT does not disclose usable-chip yield, while US export controls force it to use four-exposure patterning instead of advanced lithography tools.