Skip to content

CXMT Says Its 11.95nm Fifth-Generation DRAM Enters Mass Production, Matching Samsung and Micron Nodes

Sep 23, 2026
TNW | Semiconductors
Article image for CXMT Says Its 11.95nm Fifth-Generation DRAM Enters Mass Production, Matching Samsung and Micron Nodes

Summary

ChangXin Memory Technologies says its 11.95nm fifth-generation DRAM has entered mass production, claiming parity with Samsung and Micron’s leading nodes while using four-exposure patterning under U.S. export controls.

Key Points

  • ChangXin Memory Technologies says its fifth-generation DRAM platform enters mass production and matches Samsung and Micron’s most advanced production nodes.
  • The 11.95nm half-pitch platform produces at least 50% more gross dies per wafer than CXMT’s fourth generation and powers two 24Gb LPDDR5X chips for mid-range and high-end phones.
  • CXMT does not disclose usable-chip yield, while US export controls force it to use four-exposure patterning instead of advanced lithography tools.

Tags

Read Original Article